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ES4812 Specs and Replacement

Type Designator: ES4812

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: SOP8

ES4812 substitution

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ES4812 datasheet

 ..1. Size:640K  eternal
 es4812.pdf pdf_icon

ES4812

Eternal Semiconductor Inc. ES4812 Dual N-Channel High Density Trench MOSFET (30V, 6.9A) PRODUCT SUMMARY VDSS ID RDS(on) (m ) Typ. 24 @ VGS = 10V, ID=6.9A 30V 6.9A 30 @ VGS = 4.5V, ID=5.8A Features Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Lead Pb -free and halogen-free TOP Marking 4 8 1 2 ... See More ⇒

Detailed specifications: NVD5C648NL, SUK3015, EC4953, EC8812, EM8810, EN2300, EN2301, EN2305, 13N50, ES4953, ES9435, ES9926, ET2316, ET2N7002K, ET4410, ET4435, ET6300

Keywords - ES4812 MOSFET specs

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