All MOSFET. ES4812 Datasheet

 

ES4812 Datasheet and Replacement


   Type Designator: ES4812
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: SOP8
 

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ES4812 Datasheet (PDF)

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ES4812

Eternal Semiconductor Inc.ES4812Dual N-Channel High Density Trench MOSFET (30V, 6.9A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ.24 @ VGS = 10V, ID=6.9A30V 6.9A30 @ VGS = 4.5V, ID=5.8AFeatures Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability LeadPb-free and halogen-freeTOP Marking4 8 1 2

Datasheet: NVD5C648NL , SUK3015 , EC4953 , EC8812 , EM8810 , EN2300 , EN2301 , EN2305 , TK10A60D , ES4953 , ES9435 , ES9926 , ET2316 , ET2N7002K , ET4410 , ET4435 , ET6300 .

History: SIHFI634G | AM90P10-60B | NP82N055MUG | STD7NM80-1 | GSM7002T | DH300N08F | UTP45N02

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