ES4812 Datasheet and Replacement
Type Designator: ES4812
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: SOP8
ES4812 substitution
ES4812 Datasheet (PDF)
es4812.pdf

Eternal Semiconductor Inc.ES4812Dual N-Channel High Density Trench MOSFET (30V, 6.9A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ.24 @ VGS = 10V, ID=6.9A30V 6.9A30 @ VGS = 4.5V, ID=5.8AFeatures Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability LeadPb-free and halogen-freeTOP Marking4 8 1 2
Datasheet: NVD5C648NL , SUK3015 , EC4953 , EC8812 , EM8810 , EN2300 , EN2301 , EN2305 , AO4407 , ES4953 , ES9435 , ES9926 , ET2316 , ET2N7002K , ET4410 , ET4435 , ET6300 .
History: STM6913A | AM10N30-600I | EN2301 | SUD20P15-306 | EM8810 | AOD32324 | IRFM3205
Keywords - ES4812 MOSFET datasheet
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History: STM6913A | AM10N30-600I | EN2301 | SUD20P15-306 | EM8810 | AOD32324 | IRFM3205



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