ET4410 Datasheet and Replacement
Type Designator: ET4410
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 155 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: SOP8
ET4410 substitution
ET4410 Datasheet (PDF)
et4410.pdf

Eternal Semiconductor Inc.ET4410N-Channel Enhancement-Mode MOSFET (30V, 10A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ.9 @ VGS = 10V, ID=6.9A30V 10A13@ VGS = 4.5V, ID=5.8AFeatures Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability LeadPb-free and halogen-freePin 1 / 2 / 3: SourcePin 4: Gate
Datasheet: EN2301 , EN2305 , ES4812 , ES4953 , ES9435 , ES9926 , ET2316 , ET2N7002K , AON7506 , ET4435 , ET6300 , ET6303 , ET6304 , ET6309 , ET6310 , ET6314 , ET8205 .
History: 2SK538 | STL70N10F3 | NTHS4101PT1G | 2SK3541MGP | SFS12R08PNF | FDZ375P
Keywords - ET4410 MOSFET datasheet
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History: 2SK538 | STL70N10F3 | NTHS4101PT1G | 2SK3541MGP | SFS12R08PNF | FDZ375P



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