ET4410 MOSFET. Datasheet pdf. Equivalent
Type Designator: ET4410
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 8 nC
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 155 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: SOP8
ET4410 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ET4410 Datasheet (PDF)
..1. Size:841K eternal
et4410.pdf
et4410.pdf
Eternal Semiconductor Inc.ET4410N-Channel Enhancement-Mode MOSFET (30V, 10A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ.9 @ VGS = 10V, ID=6.9A30V 10A13@ VGS = 4.5V, ID=5.8AFeatures Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability LeadPb-free and halogen-freePin 1 / 2 / 3: SourcePin 4: Gate
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: KNE6303A
