ET4410 Specs and Replacement
Type Designator: ET4410
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 155 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: SOP8
ET4410 substitution
- MOSFET ⓘ Cross-Reference Search
ET4410 datasheet
et4410.pdf
Eternal Semiconductor Inc. ET4410 N-Channel Enhancement-Mode MOSFET (30V, 10A) PRODUCT SUMMARY VDSS ID RDS(on) (m ) Typ. 9 @ VGS = 10V, ID=6.9A 30V 10A 13@ VGS = 4.5V, ID=5.8A Features Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Lead Pb -free and halogen-free Pin 1 / 2 / 3 Source Pin 4 Gate... See More ⇒
Detailed specifications: EN2301, EN2305, ES4812, ES4953, ES9435, ES9926, ET2316, ET2N7002K, AON6380, ET4435, ET6300, ET6303, ET6304, ET6309, ET6310, ET6314, ET8205
Keywords - ET4410 MOSFET specs
ET4410 cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: BSC093N04LSG
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