ET4435 Datasheet and Replacement. Cross Reference Search

ET4435 Datasheet (PDF)

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Eternal Semiconductor Inc. ET4435P-Channel Enhancement-Mode MOSFET (-30V, -9.1A)PRODUCT SUMMARYVDSS ID RDS(on) (m)TYP16 @ VGS = -10V ,ID=-9.1A-30 -9.121 @ VGS = -4.5V,ID=-6.9AFeatures Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package Ordering information ET4435LeadPb-free and halogen-f

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CET4435AP-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -8.8A, RDS(ON) = 24m @VGS = -10V. RDS(ON) = 35m @VGS = -4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-223 package.GDSDGSOT-223SABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-

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CET4435Awww.VBsemi.twP-Channel 35 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET- 35 9.8 nC0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECS APPLICATIONS

Datasheet: EN2305 , ES4812 , ES4953 , ES9435 , ES9926 , ET2316 , ET2N7002K , ET4410 , AO4407 , ET6300 , ET6303 , ET6304 , ET6309 , ET6310 , ET6314 , ET8205 , ET8205A .