ET4435 PDF and Equivalents Search

 ..1. Size:793K  eternal
 et4435.pdf

Eternal Semiconductor Inc. ET4435 P-Channel Enhancement-Mode MOSFET (-30V, -9.1A) PRODUCT SUMMARY VDSS ID RDS(on) (m )TYP 16 @ VGS = -10V ,ID=-9.1A -30 -9.1 21 @ VGS = -4.5V,ID=-6.9A Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package Ordering information ET4435 Lead Pb -free and halogen-f... See More ⇒

 0.1. Size:143K  cet
 cet4435a.pdf

CET4435A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -8.8A, RDS(ON) = 24m @VGS = -10V. RDS(ON) = 35m @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-223 package. G D S D G SOT-223 S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-... See More ⇒

 0.2. Size:892K  cn vbsemi
 cet4435a.pdf

CET4435A www.VBsemi.tw P-Channel 35 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET - 35 9.8 nC 0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC S APPLICATIONS ... See More ⇒