ET8205A MOSFET Datasheet: N-Ch, 20V, 6A. Full specification with pinout and replacement list

ET8205A Specs and Replacement

Type Designator: ET8205A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 148 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: TSSOP8

ET8205A substitution

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ET8205A datasheet

..1. Size:573K eternal
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Eternal Semiconductor Inc. ET8205A Dual N-Channel High Density Trench MOSFET (20V, 6A) PRODUCT SUMMARY VDSS ID RDS(on) (m ) Typ. 19 @ VGS = 4.5V, ID=6A 20V 6.0A 20@ VGS = 4.0V, ID=6A 25@ VGS = 2.5V, ID=5.2A Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package Lead Pb -free and halogen-free Pin 1... See More ⇒

8.1. Size:752K eternal
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Eternal Semiconductor Inc. ET8205B Dual N-Channel High Density Trench MOSFET (20V, 7A) PRODUCT SUMMARY VDSS ID RDS(on) (m ) Typ. 16 @ VGS = 4.5V, ID=7A 20V 7A 19 @ VGS = 2.5V, ID=5.5A Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package Lead Pb -free and halogen-free ET8205B Pin Assignmetty & Sy... See More ⇒

8.2. Size:467K eternal
et8205.pdf pdf_icon

Eternal Semiconductor Inc. ET8205 Dual N-Channel High Density Trench MOSFET (20V, 6A) PRODUCT SUMMARY VDSS ID RDS(on) (m ) Typ. 19 @ VGS = 4.5V, ID=6A 20V 6.0A 20 @ VGS = 4.0V, ID=6A 25 @ VGS = 2.5V, ID=5.2A Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package Lead Pb -free and halogen-free ET82... See More ⇒

Detailed specifications: ET4435, ET6300, ET6303, ET6304, ET6309, ET6310, ET6314, ET8205, BS170, ET8205B, ET8818, EV2315, EV3400, EV3401, EV3404, EV3407, EV3415