All MOSFET. ET8205A Datasheet

 

ET8205A Datasheet and Replacement


   Type Designator: ET8205A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 148 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TSSOP8
 

 ET8205A substitution

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ET8205A Datasheet (PDF)

 ..1. Size:573K  eternal
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ET8205A

Eternal Semiconductor Inc.ET8205ADual N-Channel High Density Trench MOSFET (20V, 6A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ.19 @ VGS = 4.5V, ID=6A20V 6.0A 20@ VGS = 4.0V, ID=6A25@ VGS = 2.5V, ID=5.2AFeatures Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package LeadPb-free and halogen-freePin 1

 8.1. Size:752K  eternal
 et8205b.pdf pdf_icon

ET8205A

Eternal Semiconductor Inc.ET8205BDual N-Channel High Density Trench MOSFET (20V, 7A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ.16 @ VGS = 4.5V, ID=7A20V 7A19 @ VGS = 2.5V, ID=5.5AFeatures Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package LeadPb-free and halogen-freeET8205B Pin Assignmetty & Sy

 8.2. Size:467K  eternal
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ET8205A

Eternal Semiconductor Inc.ET8205Dual N-Channel High Density Trench MOSFET (20V, 6A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ.19 @ VGS = 4.5V, ID=6A20V 6.0A 20 @ VGS = 4.0V, ID=6A25 @ VGS = 2.5V, ID=5.2AFeatures Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package LeadPb-free and halogen-freeET82

Datasheet: ET4435 , ET6300 , ET6303 , ET6304 , ET6309 , ET6310 , ET6314 , ET8205 , 18N50 , ET8205B , ET8818 , EV2315 , EV3400 , EV3401 , EV3404 , EV3407 , EV3415 .

History: SWI4N65K | AONS32302 | VBK8238 | AP4435GJ-HF | FDMS3668S | AOD468 | AP15P10GI

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