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EV2315 Specs and Replacement

Type Designator: EV2315

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 497 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: SOT23

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EV2315 datasheet

 ..1. Size:756K  eternal
 ev2315.pdf pdf_icon

EV2315

Eternal Semiconductor Inc. EV2315 P-Channel Enhancement-Mode MOSFET (-20V, -5.9A) PRODUCT SUMMARY VDSS ID RDS(on) (m )Max 22 @ VGS = -4.5 V,ID=-5.9A -20V -5.9A 29 @ VGS = -2.5V,ID=-3.0A 45 @ VGS = -1.8V,ID=-1.5A Features Super high dense cell trench design for low RDS(on) Rugged and reliable SOT-23-3L package Lead Pb -free and halogen-free EV2315 Pin Assignmen... See More ⇒

Detailed specifications: ET6304, ET6309, ET6310, ET6314, ET8205, ET8205A, ET8205B, ET8818, IRF1407, EV3400, EV3401, EV3404, EV3407, EV3415, EY4409, GM4953, FIR10N60FG

Keywords - EV2315 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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