All MOSFET. EV2315 Datasheet

 

EV2315 Datasheet and Replacement


   Type Designator: EV2315
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 497 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: SOT23
 

 EV2315 substitution

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EV2315 Datasheet (PDF)

 ..1. Size:756K  eternal
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EV2315

Eternal Semiconductor Inc.EV2315P-Channel Enhancement-Mode MOSFET (-20V, -5.9A)PRODUCT SUMMARYVDSS ID RDS(on) (m)Max22 @ VGS = -4.5 V,ID=-5.9A-20V -5.9A 29 @ VGS = -2.5V,ID=-3.0A45 @ VGS = -1.8V,ID=-1.5AFeatures Super high dense cell trench design for low RDS(on) Rugged and reliable SOT-23-3L package LeadPb-free and halogen-freeEV2315 Pin Assignmen

Datasheet: ET6304 , ET6309 , ET6310 , ET6314 , ET8205 , ET8205A , ET8205B , ET8818 , RFP50N06 , EV3400 , EV3401 , EV3404 , EV3407 , EV3415 , EY4409 , GM4953 , FIR10N60FG .

History: AON2401 | SUM90N03-2M2P

Keywords - EV2315 MOSFET datasheet

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