FIR12N60FG MOSFET. Datasheet pdf. Equivalent
Type Designator: FIR12N60FG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 41 nC
trⓘ - Rise Time: 85 nS
Cossⓘ - Output Capacitance: 183 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: TO220F
FIR12N60FG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FIR12N60FG Datasheet (PDF)
fir12n60fg.pdf
FIR12N60FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FSwitchng Regulator ApplicationFeatures BVDDS=600V (Min.) Low gate charge: Qg=41nC (Typ.) Low drain-source On resistance: RDS(on)=0.65 (Max.) G D S 100% avalanche tested RoHS compliant device D G S Marking DiagramY = YearA = Assembly LocationWW = Work WeekYAWWFIR12N60F = Specif
fir12n65fg.pdf
FIR12N65FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FSwitchng Regulator ApplicationFeatures High Voltage : BVDSS=650V(Min.) Low Crss : Crss=14.6pF(Typ.) G Low gate charge : Qg=41nC(Typ.) D S Low RDS(on) : RDS(on)=0.65(Max.) D G S Marking DiagramY = YearA = Assembly LocationYAWWWW = Work WeekFIR12N65FFIR12N65F = Specific Device C
fir120n055pg.pdf
FIR120N055PGN-Channel Enhancement Mode Power MosfetPIN Connection TO-220ABDescriptionThe FIR120N055PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =55V,ID =120A RDS(ON)
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
