GP2302 MOSFET. Datasheet pdf. Equivalent
Type Designator: GP2302
Marking Code: S2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 2.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 2.9 nC
trⓘ - Rise Time: 3.2 nS
Cossⓘ - Output Capacitance: 48 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SOT23
GP2302 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GP2302 Datasheet (PDF)
gp2302.pdf
GP2302 20V N-Channel MOSFET Product Summary SOT-23 V R I (BR)DSS DS(on)MAX D45m@4.5V 20V 2.1A 60m@2.5V Feature TrenchFET Power MOSFET Excellent RDS(on) and Low Gate Charge Schematic diagram Application DC/DC Converter Load Switch for Portable Devices Battery Switch MARKING: ABSOLUTE MAXIMUM RATINGS (Ta=25 unless otherwise noted) P
gp2301.pdf
GP2301 20V P-Channel MOSFET Product Summary SOT-23 V R I (BR)DSS DS(on)MAX D110m@-4.5V -20V -2.3A 140m@-2.5V Feature TrenchFET Power MOSFET Excellent RDS(on) and Low Gate Charge Schematic diagram Application DC/DC Converter Load Switch for Portable Devices Battery Switch MARKING: ABSOLUTE MAXIMUM RATINGS (Ta=25 unless otherwise note
hgp230n10a.pdf
P-1HGP230N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching22RDS(on),typ mW Enhanced Body diode dv/dt capability31 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPSTO-220 Hard Switching and High Speed Circuit Power ToolsDrain UPSPin2
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