HOA2303 MOSFET. Datasheet pdf. Equivalent
Type Designator: HOA2303
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 1.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 35 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: SOT23
HOA2303 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HOA2303 Datasheet (PDF)
hoa2303.pdf
Plastic-Encapsulate MosfetsHOA2303 P-Channel MOSFETFEATURE TrenchFET Power MOSFET APPLICATIONS Load Switch for Portable Devices 1.Gate DC/DC Converter 2.SourceSOT-233.DrainMaximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value UnitDrain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 Continuous Drain Current ID -1.9A Continuous So
hoa2307.pdf
Plastic-Encapsulate MosfetsFEATURESHOA2307Lower on-resistanceP-Channel MOSFETReliable and RuggedAbsolute Maximum Ratings (TA=25oC, unless otherwise noted)Parameter Symbol Ratings UnitDrain-Source Voltage VDS -30 V1.GateGate-source Voltage VGS 20 V 2.SourceSOT-23a3.DrainDrain Current (Continuous) ID -2.7 AobTotal Power Dissipation @TA=25 C PD 1.1 WOperating Ju
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