All MOSFET. SPN3006 Datasheet

 

SPN3006 Datasheet and Replacement


   Type Designator: SPN3006
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14.5 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO252 TO251S
 

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SPN3006 Datasheet (PDF)

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SPN3006

SPN3006 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS High Frequency Synchronous Buck Converter The SPN3006 is the N-Channel logic enhancement mode DC/DC Power System power field effect transistors are produced using high cell Load Switch density, DMOS trench technology. The SPN3006 has been designed specifically to improve the overall efficiency of

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SPN3006

SPN30T10 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS High Frequency Small Power System The SPN30T10 is the N-Channel logic enhancement mode DC/DC Converter power field effect transistor which is produced using super Load Switch high cell density DMOS trench technology. SPN30T10 has been designed specifically to improve the overall efficiency of DC/DC conver

Datasheet: BL2302 , BL2305 , GP2301 , GP2302 , GP3139 , GP3401 , HOA2303 , HOA2307 , AO4468 , SMD2N65 , SMD4N65 , SMD7N65 , SMF10N60 , SMF10N65 , SMF12N60 , SMF12N65 , SMF14N65 .

History: WTM3401 | KSK596 | AON6790 | HPW080NE5SPA | NP90N04VDG

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