SPN3006 MOSFET. Datasheet pdf. Equivalent
Type Designator: SPN3006
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11.1 nC
trⓘ - Rise Time: 14.5 nS
Cossⓘ - Output Capacitance: 190 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO252 TO251S
SPN3006 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPN3006 Datasheet (PDF)
spn3006.pdf
SPN3006 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS High Frequency Synchronous Buck Converter The SPN3006 is the N-Channel logic enhancement mode DC/DC Power System power field effect transistors are produced using high cell Load Switch density, DMOS trench technology. The SPN3006 has been designed specifically to improve the overall efficiency of
spn30t10.pdf
SPN30T10 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS High Frequency Small Power System The SPN30T10 is the N-Channel logic enhancement mode DC/DC Converter power field effect transistor which is produced using super Load Switch high cell density DMOS trench technology. SPN30T10 has been designed specifically to improve the overall efficiency of DC/DC conver
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