All MOSFET. SMD4N65 Datasheet

 

SMD4N65 Datasheet and Replacement


   Type Designator: SMD4N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 51 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
   Package: TO252
 

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SMD4N65 Datasheet (PDF)

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SMD4N65

SMD4N65650V N-Channnel MOSFETFeatures 4.0A, 650V, R =2.2@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Value

Datasheet: GP2301 , GP2302 , GP3139 , GP3401 , HOA2303 , HOA2307 , SPN3006 , SMD2N65 , AO4468 , SMD7N65 , SMF10N60 , SMF10N65 , SMF12N60 , SMF12N65 , SMF14N65 , SMF16N65 , SMF20N65 .

History: IRLR8256PBF

Keywords - SMD4N65 MOSFET datasheet

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