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SMD4N65 Specs and Replacement

Type Designator: SMD4N65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 51 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 49 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm

Package: TO252

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SMD4N65 datasheet

 ..1. Size:964K  huake
 smd4n65.pdf pdf_icon

SMD4N65

SMD4N65 650V N-Channnel MOSFET Features 4.0A, 650V, R =2.2 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction Absolute Maximum Ratings(Tc=25 C unless otherwise noted) Symbol Parameter Value... See More ⇒

Detailed specifications: GP2301, GP2302, GP3139, GP3401, HOA2303, HOA2307, SPN3006, SMD2N65, AO4468, SMD7N65, SMF10N60, SMF10N65, SMF12N60, SMF12N65, SMF14N65, SMF16N65, SMF20N65

Keywords - SMD4N65 MOSFET specs

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