SMD7N65 PDF and Equivalents Search

 

SMD7N65 Specs and Replacement

Type Designator: SMD7N65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO252

SMD7N65 substitution

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SMD7N65 datasheet

 ..1. Size:895K  huake
 smd7n65.pdf pdf_icon

SMD7N65

SMD7N65 650V N-Channnel MOSFET Features 7.0A, 650V, R =1.2 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction Absolute Maximum Ratings(Tc=25 C unless otherwise noted) Symbol Parameter Value... See More ⇒

Detailed specifications: GP2302, GP3139, GP3401, HOA2303, HOA2307, SPN3006, SMD2N65, SMD4N65, IRF730, SMF10N60, SMF10N65, SMF12N60, SMF12N65, SMF14N65, SMF16N65, SMF20N65, SMF2N60

Keywords - SMD7N65 MOSFET specs

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