SMD7N65 Datasheet and Replacement
Type Designator: SMD7N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 30 nC
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 170 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO252
SMD7N65 substitution
SMD7N65 Datasheet (PDF)
smd7n65.pdf

SMD7N65650V N-Channnel MOSFETFeatures 7.0A, 650V, R =1.2@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Value
Datasheet: GP2302 , GP3139 , GP3401 , HOA2303 , HOA2307 , SPN3006 , SMD2N65 , SMD4N65 , BS170 , SMF10N60 , SMF10N65 , SMF12N60 , SMF12N65 , SMF14N65 , SMF16N65 , SMF20N65 , SMF2N60 .
Keywords - SMD7N65 MOSFET datasheet
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