All MOSFET. 2N6760JANTXV Datasheet

 

2N6760JANTXV Datasheet and Replacement


   Type Designator: 2N6760JANTXV
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO3
 

 2N6760JANTXV substitution

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2N6760JANTXV Datasheet (PDF)

 8.1. Size:146K  international rectifier
 2n6760 irf330.pdf pdf_icon

2N6760JANTXV

PD - 90335FIRF330REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760HEXFETTRANSISTORS JANTXV2N6760THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF330 400V 1.00 5.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

 8.2. Size:138K  fairchild semi
 2n6759 2n6760.pdf pdf_icon

2N6760JANTXV

 9.1. Size:142K  1
 2n6766.pdf pdf_icon

2N6760JANTXV

 9.2. Size:140K  1
 2n6768.pdf pdf_icon

2N6760JANTXV

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Datasheet: 2N6758JANTX , 2N6758JANTXV , 2N6758JTX , 2N6758JTXV , 2N6759 , 2N6760 , 2N6760JAN , 2N6760JANTX , IRLB4132 , 2N6760JTX , 2N6760JTXV , 2N6761 , 2N6762 , 2N6762JAN , 2N6762JANTX , 2N6762JANTXV , 2N6762JTX .

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