All MOSFET. SSP70N10A Datasheet

 

SSP70N10A MOSFET. Datasheet pdf. Equivalent

Type Designator: SSP70N10A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 188 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Drain Current |Id|: 55 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 151 nC

Drain-Source Capacitance (Cd): 3750 pF

Maximum Drain-Source On-State Resistance (Rds): 0.023 Ohm

Package: TO220

SSP70N10A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSP70N10A Datasheet (PDF)

1.1. ssp70n10a.pdf Size:214K _samsung

SSP70N10A
SSP70N10A

SSP70N10A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.023 Rugged Gate Oxide Technology Lower Input Capacitance ID = 55 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.018 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charac

Datasheet: SSP4N90AS , SSP5N80A , SSP5N90A , SSP6N55 , SSP6N60 , SSP6N70A , SSP6N80A , SSP6N90A , IRF3205 , SSP7N60A , SSP7N80A , SSP80N06A , SSR1N50 , SSR1N50A , SSR1N60A , SSR2N60A , SSR3055A .

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