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SMF14N65 Specs and Replacement

Type Designator: SMF14N65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 49 nC

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 255 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO220F

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SMF14N65 datasheet

 ..1. Size:467K  huake
 smf14n65.pdf pdf_icon

SMF14N65

SMF14N65 650V N-Channnel MOSFET Features 14A, 650V, R =0.6 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction Absolute Maximum Ratings(Tc=25 C unless otherwise noted) Symbol Parameter Value... See More ⇒

Detailed specifications: SPN3006, SMD2N65, SMD4N65, SMD7N65, SMF10N60, SMF10N65, SMF12N60, SMF12N65, 20N60, SMF16N65, SMF20N65, SMF2N60, SMF2N65, SMF4N60, SMF4N65, SMF5N60, SMF5N65

Keywords - SMF14N65 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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