All MOSFET. SMF4N60 Datasheet

 

SMF4N60 Datasheet and Replacement


   Type Designator: SMF4N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO220F
 

 SMF4N60 substitution

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SMF4N60 Datasheet (PDF)

 ..1. Size:948K  huake
 smf4n60.pdf pdf_icon

SMF4N60

SMF4N60600V N-Channnel MOSFETFeatures 4.0A, 600V, R =2.1@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Value

 8.1. Size:949K  huake
 smf4n65.pdf pdf_icon

SMF4N60

SMF4N65650V N-Channnel MOSFETFeatures 4.0A, 650V, R =2.2@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Value

Datasheet: SMF10N65 , SMF12N60 , SMF12N65 , SMF14N65 , SMF16N65 , SMF20N65 , SMF2N60 , SMF2N65 , IRF640 , SMF4N65 , SMF5N60 , SMF5N65 , SMF7N60 , SMF7N65 , SMF8N60 , SMF8N65 , SMT10N60 .

History: 2SK1769 | VS40200AT | 2SK3294 | 2SK3283 | SSF6N70G | SSF60R360S2E | 2SK1040

Keywords - SMF4N60 MOSFET datasheet

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