All MOSFET. SMF8N65 Datasheet

 

SMF8N65 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SMF8N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 51 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 31 nC
   trⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO220F

 SMF8N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SMF8N65 Datasheet (PDF)

 ..1. Size:867K  huake
 smf8n65.pdf

SMF8N65 SMF8N65

SMF8N65650V N-Channnel MOSFETFeatures 8.0A, 650V, R =1.1@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Value

 8.1. Size:867K  huake
 smf8n60.pdf

SMF8N65 SMF8N65

SMF8N60600V N-Channnel MOSFETFeatures 8.0A, 600V, R =1.0@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Value

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: RFM10N12 | RF1S640SM | SVSP11N60FJDD2

 

 
Back to Top