SMF8N65 MOSFET Datasheet: N-Ch, 650V, 8A. Full specification with pinout and replacement list

SMF8N65 Specs and Replacement

Type Designator: SMF8N65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 51 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 105 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: TO220F

SMF8N65 substitution

- MOSFET ⓘ Cross-Reference Search

SMF8N65 datasheet

..1. Size:867K huake
smf8n65.pdf pdf_icon

SMF8N65 650V N-Channnel MOSFET Features 8.0A, 650V, R =1.1 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction Absolute Maximum Ratings(Tc=25 C unless otherwise noted) Symbol Parameter Value... See More ⇒

8.1. Size:867K huake
smf8n60.pdf pdf_icon

SMF8N60 600V N-Channnel MOSFET Features 8.0A, 600V, R =1.0 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction Absolute Maximum Ratings(Tc=25 C unless otherwise noted) Symbol Parameter Value... See More ⇒

Detailed specifications: SMF2N65, SMF4N60, SMF4N65, SMF5N60, SMF5N65, SMF7N60, SMF7N65, SMF8N60, AO3400, SMT10N60, SMT12N60, SMT5N60, SMT8N60, 1H05, 1H10, 5N04, HA20N50