All MOSFET. SMT10N60 Datasheet

 

SMT10N60 Datasheet and Replacement


   Type Designator: SMT10N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
   Package: TO220
 

 SMT10N60 substitution

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SMT10N60 Datasheet (PDF)

 ..1. Size:891K  huake
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SMT10N60

SMT10N60600V N-Channnel MOSFETFeatures 10.0A, 600V, R =0.7@V =10VDS(on(Typ)) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Val

Datasheet: SMF4N60 , SMF4N65 , SMF5N60 , SMF5N65 , SMF7N60 , SMF7N65 , SMF8N60 , SMF8N65 , IRF3710 , SMT12N60 , SMT5N60 , SMT8N60 , 1H05 , 1H10 , 5N04 , HA20N50 , HA20N60 .

History: AONS1R1A70 | 2SK2117 | SMIRF16N65T1TL | DMN60H3D5SK3 | IRF7478TR | SMF14N65 | WMO22N50C4

Keywords - SMT10N60 MOSFET datasheet

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