SMT10N60 PDF and Equivalents Search

 

SMT10N60 Specs and Replacement

Type Designator: SMT10N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 135 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm

Package: TO220

SMT10N60 substitution

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SMT10N60 datasheet

 ..1. Size:891K  huake
 smt10n60.pdf pdf_icon

SMT10N60

SMT10N60 600V N-Channnel MOSFET Features 10.0A, 600V, R =0.7 @V =10V DS(on(Typ)) GS Low Gate Charge Low C rss 100% Avalanche Tested Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction Absolute Maximum Ratings(Tc=25 C unless otherwise noted) Symbol Parameter Val... See More ⇒

Detailed specifications: SMF4N60, SMF4N65, SMF5N60, SMF5N65, SMF7N60, SMF7N65, SMF8N60, SMF8N65, IRFB4227, SMT12N60, SMT5N60, SMT8N60, 1H05, 1H10, 5N04, HA20N50, HA20N60

Keywords - SMT10N60 MOSFET specs

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