All MOSFET. SMT8N60 Datasheet

 

SMT8N60 Datasheet and Replacement


   Type Designator: SMT8N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 116 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO220
 

 SMT8N60 substitution

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SMT8N60 Datasheet (PDF)

 ..1. Size:857K  huake
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SMT8N60

SMT8N60600V N-Channnel MOSFETFeatures 8.0A, 600V, R =1.0@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Value

Datasheet: SMF5N65 , SMF7N60 , SMF7N65 , SMF8N60 , SMF8N65 , SMT10N60 , SMT12N60 , SMT5N60 , IRFB4110 , 1H05 , 1H10 , 5N04 , HA20N50 , HA20N60 , HA210N06 , HA25N50 , HA9N90 .

History: SSD10N20-400D | IRFB4310PBF | SSF6NS70F | SJMN600R70MF | IRLU3717 | IRFB4110GPBF

Keywords - SMT8N60 MOSFET datasheet

 SMT8N60 cross reference
 SMT8N60 equivalent finder
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