SMT8N60 Specs and Replacement
Type Designator: SMT8N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 116 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 105 nS
Cossⓘ - Output Capacitance: 175 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO220
SMT8N60 substitution
- MOSFET ⓘ Cross-Reference Search
SMT8N60 datasheet
smt8n60.pdf
SMT8N60 600V N-Channnel MOSFET Features 8.0A, 600V, R =1.0 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction Absolute Maximum Ratings(Tc=25 C unless otherwise noted) Symbol Parameter Value... See More ⇒
Detailed specifications: SMF5N65, SMF7N60, SMF7N65, SMF8N60, SMF8N65, SMT10N60, SMT12N60, SMT5N60, AON6414A, 1H05, 1H10, 5N04, HA20N50, HA20N60, HA210N06, HA25N50, HA9N90
Keywords - SMT8N60 MOSFET specs
SMT8N60 cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: ASDM30N55E | ASDM30P09ZB | IAUS200N08S5N023 | ME9435A | ASDM30N65E
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