All MOSFET. SMT8N60 Datasheet

 

SMT8N60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SMT8N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 116 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 31 nC
   trⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO220

 SMT8N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SMT8N60 Datasheet (PDF)

 ..1. Size:857K  huake
 smt8n60.pdf

SMT8N60 SMT8N60

SMT8N60600V N-Channnel MOSFETFeatures 8.0A, 600V, R =1.0@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Value

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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