All MOSFET. HA20N60 Datasheet

 

HA20N60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HA20N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 80 nC
   trⓘ - Rise Time: 66 nS
   Cossⓘ - Output Capacitance: 291 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO3P

 HA20N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HA20N60 Datasheet (PDF)

 ..1. Size:3552K  haolin elec
 ha20n60.pdf

HA20N60 HA20N60

HA20N60600V N-Channel MOSFETFEATURES Fast switching 100% avalanche testedBVDSS = 600 V Improved dv/dt capabilityRDS(on) typ = 0.34 1APPLICATIONS2ID = 20 A3 Switch Mode Power Supply (SMPS)1.Gate 2. Drain 3. Source Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package Marking

 0.1. Size:858K  feihonltd
 fhf20n60a fhp20n60a fha20n60a.pdf

HA20N60 HA20N60

N N-CHANNEL MOSFET FHF20N60A/ FHP20N60A/FHA20N60A MAIN CHARACTERISTICS FEATURES Low gate charge ID 20A Crss ( 20pF) Low Crss (typical 20pF ) VDSS 600V Fast switching Rdson-typ 0.32 @Vgs=10V 100% 100% avalanche tested P (T =25) 85W D C

 8.1. Size:740K  feihonltd
 fhf20n65a fhp20n65a fha20n65a.pdf

HA20N60 HA20N60

N N-CHANNEL MOSFET FHF20N65A/ FHP20N65A/FHA20N65A MAIN CHARACTERISTICS FEATURES Low gate charge ID 20A Crss ( 20pF) Low Crss (typical 20pF ) VDSS 650V Fast switching Rdson-typ 0.35 @Vgs=10V 100% 100% avalanche tested P (T =25) 85W D C

 9.1. Size:164K  vishay
 siha20n50e.pdf

HA20N60 HA20N60

SiHA20N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.184 Reduced switching and conduction lossesQg max. (nC) 92 Low gate charge (Qg)Qgs (nC) 10 Avalanche energy rated (UIS)Qgd (nC) 19 Mater

 9.2. Size:939K  feihonltd
 fha20n90a.pdf

HA20N60 HA20N60

N N-CHANNEL MOSFET FHA20N90A MAIN CHARACTERISTICS FEATURES ID 20A Low gate charge VDSS 900 V Crss ( 18.3pF) Low Crss (typical 18.3pF ) Rdson-typ @Vgs=10V 0.28 Fast switching Qg-typ 140.5nC 100% 100% avalanche tested dv/dt Impro

 9.3. Size:402K  feihonltd
 fha20n50a.pdf

HA20N60 HA20N60

 9.4. Size:4791K  haolin elec
 ha20n50.pdf

HA20N60 HA20N60

HA20N50500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Absolute Maximum Ratings TC = 25 unless otherwise notedC,Parameter Symbol Value UnitDrain-Source Voltage (VGS = 0V) VDSS 500 VContinuous Drai

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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