HA20N60 Specs and Replacement
Type Designator: HA20N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 66 nS
Cossⓘ - Output Capacitance: 291 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO3P
HA20N60 substitution
- MOSFET ⓘ Cross-Reference Search
HA20N60 datasheet
ha20n60.pdf
HA20N60 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested BVDSS = 600 V Improved dv/dt capability RDS(on) typ = 0.34 1 APPLICATIONS 2 ID = 20 A 3 Switch Mode Power Supply (SMPS) 1.Gate 2. Drain 3. Source Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking ... See More ⇒
siha20n50e.pdf
SiHA20N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.184 Reduced switching and conduction losses Qg max. (nC) 92 Low gate charge (Qg) Qgs (nC) 10 Avalanche energy rated (UIS) Qgd (nC) 19 Mater... See More ⇒
Detailed specifications: SMT10N60, SMT12N60, SMT5N60, SMT8N60, 1H05, 1H10, 5N04, HA20N50, 7N65, HA210N06, HA25N50, HA9N90, HB100N08, HP100N08, HB3510P, HP3510P, HB3710P
Keywords - HA20N60 MOSFET specs
HA20N60 cross reference
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