All MOSFET. HA20N60 Datasheet

 

HA20N60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HA20N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 80 nC
   trⓘ - Rise Time: 66 nS
   Cossⓘ - Output Capacitance: 291 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO3P

 HA20N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HA20N60 Datasheet (PDF)

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