HA210N06 PDF and Equivalents Search

 

HA210N06 Specs and Replacement

Type Designator: HA210N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 220 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 210 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 1020 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO3P

HA210N06 substitution

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HA210N06 datasheet

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HA210N06

210A 60V N-Channel MOSFET HA210N06 FEATURES BVDSS = 60 V 4m RDS(on) typ = 60V/210A ID = 210 A RDS(ON)= 4m (Max)@ VGS=10V TO-3P Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss 1 2 High avalanche Current 3 1.Gate 2. Drain 3. Source Application Power Supply UPS Battery Management System Absolute Ma... See More ⇒

Detailed specifications: SMT12N60, SMT5N60, SMT8N60, 1H05, 1H10, 5N04, HA20N50, HA20N60, IRFP250N, HA25N50, HA9N90, HB100N08, HP100N08, HB3510P, HP3510P, HB3710P, HP3710P

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