HA210N06 MOSFET. Datasheet pdf. Equivalent
Type Designator: HA210N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 220 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 210 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 135 nC
trⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 1020 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO3P
HA210N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HA210N06 Datasheet (PDF)
..1. Size:2781K haolin elec
ha210n06.pdf
ha210n06.pdf
210A 60V N-Channel MOSFETHA210N06 FEATURES BVDSS = 60 V4mRDS(on) typ = 60V/210AID = 210 A RDS(ON)= 4m (Max)@ VGS=10V TO-3P Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss 12 High avalanche Current 31.Gate 2. Drain 3. Source Application Power Supply UPS Battery Management System Absolute Ma
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