All MOSFET. HA210N06 Datasheet

 

HA210N06 Datasheet and Replacement


   Type Designator: HA210N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 210 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 1020 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO3P
 

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HA210N06 Datasheet (PDF)

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HA210N06

210A 60V N-Channel MOSFETHA210N06 FEATURES BVDSS = 60 V4mRDS(on) typ = 60V/210AID = 210 A RDS(ON)= 4m (Max)@ VGS=10V TO-3P Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss 12 High avalanche Current 31.Gate 2. Drain 3. Source Application Power Supply UPS Battery Management System Absolute Ma

Datasheet: SMT12N60 , SMT5N60 , SMT8N60 , 1H05 , 1H10 , 5N04 , HA20N50 , HA20N60 , AON7408 , HA25N50 , HA9N90 , HB100N08 , HP100N08 , HB3510P , HP3510P , HB3710P , HP3710P .

History: SSM9922GEO | WMP15N65C2 | SI4966DY | NCEP10N85AG | CPC3701C | IRF5803 | HCD65R2K2

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