HA210N06 Specs and Replacement
Type Designator: HA210N06
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 220 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 210 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 1020 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO3P
HA210N06 substitution
- MOSFET ⓘ Cross-Reference Search
HA210N06 datasheet
ha210n06.pdf
210A 60V N-Channel MOSFET HA210N06 FEATURES BVDSS = 60 V 4m RDS(on) typ = 60V/210A ID = 210 A RDS(ON)= 4m (Max)@ VGS=10V TO-3P Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss 1 2 High avalanche Current 3 1.Gate 2. Drain 3. Source Application Power Supply UPS Battery Management System Absolute Ma... See More ⇒
Detailed specifications: SMT12N60, SMT5N60, SMT8N60, 1H05, 1H10, 5N04, HA20N50, HA20N60, IRFP250N, HA25N50, HA9N90, HB100N08, HP100N08, HB3510P, HP3510P, HB3710P, HP3710P
Keywords - HA210N06 MOSFET specs
HA210N06 cross reference
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