HP3710P Datasheet and Replacement
Type Designator: HP3710P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 610 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO220
HP3710P substitution
HP3710P Datasheet (PDF)
hb3710p hp3710p.pdf

HB3710P,HP3710P100V N-Channel MOSFETFEATURES Fast switching TO-263TO-220 100% avalanche tested Improved dv/dt capability2113231.Gate 2. Drain 3. SourceAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Absolute Maximum Ratings TC = 25 unless otherwise notedC,ValueParameter Sym
Datasheet: HA210N06 , HA25N50 , HA9N90 , HB100N08 , HP100N08 , HB3510P , HP3510P , HB3710P , IRF4905 , HD1H15A , HD30N03 , HU30N03 , HD30N06 , HU30N06 , HD40N04 , HD50N06D , HU50N06D .
History: CS4N65FA9HD
Keywords - HP3710P MOSFET datasheet
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HP3710P lookup
HP3710P substitution
HP3710P replacement
History: CS4N65FA9HD



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