HP3710P Specs and Replacement
Type Designator: HP3710P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 610 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO220
HP3710P substitution
- MOSFET ⓘ Cross-Reference Search
HP3710P datasheet
hb3710p hp3710p.pdf
HB3710P,HP3710P 100V N-Channel MOSFET FEATURES Fast switching TO-263 TO-220 100% avalanche tested Improved dv/dt capability 2 1 1 3 2 3 1.Gate 2. Drain 3. Source APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Absolute Maximum Ratings TC = 25 unless otherwise noted C, Value Parameter Sym... See More ⇒
Detailed specifications: HA210N06, HA25N50, HA9N90, HB100N08, HP100N08, HB3510P, HP3510P, HB3710P, IRF4905, HD1H15A, HD30N03, HU30N03, HD30N06, HU30N06, HD40N04, HD50N06D, HU50N06D
Keywords - HP3710P MOSFET specs
HP3710P cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: MEE4294-G
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