HD30N06 MOSFET Datasheet: N-Ch, 60V, 30A. Full specification with pinout and replacement list

HD30N06 Specs and Replacement

Type Designator: HD30N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 23 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.4 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO252

HD30N06 substitution

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HD30N06 datasheet

..1. Size:2179K haolin elec
hd30n06 hu30n06.pdf pdf_icon

Nov 2019 BVDSS = 60 V RDS(on) = 32 m HD30N06 / HU30N06 ID = 30 A 60V N-Channel MOSFET TO-252 TO-251 FEATURES Originative New Design HD30N06 HU30N06 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 40 nC (Typ.) Exte... See More ⇒

8.1. Size:1392K haolin elec
hd30n03 hu30n03.pdf pdf_icon

Nov 2009 BVDSS = 30 V RDS(on) = 19m HD30N03 / HU30N03 ID = 20 A 30V N-Channel MOSFET TO-252 TO-251 FEATURES Originative New Design HD30N03 HU30N03 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 18.5 nC (Typ.) Ext... See More ⇒

Detailed specifications: HP100N08, HB3510P, HP3510P, HB3710P, HP3710P, HD1H15A, HD30N03, HU30N03, IRFP260, HU30N06, HD40N04, HD50N06D, HU50N06D, HD5N50, HU5N50, HD60N03, HU60N03