HD50N06D MOSFET. Datasheet pdf. Equivalent
Type Designator: HD50N06D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 40 nC
trⓘ - Rise Time: 105 nS
Cossⓘ - Output Capacitance: 600 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: TO252
HD50N06D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HD50N06D Datasheet (PDF)
hd50n06d hu50n06d.pdf
Nov 2019BVDSS = 60 VRDS(on) = 15 mHD50N06D / HU50N06DID = 50 A60V N-Channel MOSFETTO-252 TO-251FEATURES Originative New DesignHD50N06D HU50N06D Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.)
fhp50n06 fhu50n06d fhd50n06d.pdf
N N-CHANNEL MOSFET FHP50N06/FHU50N06D/FHD50N06D MAIN CHARACTERISTICS FEATURES ID 50 A Low gate charge VDSS 60 V Crss ( 130pF) Low Crss (typical 130pF ) Rdson-typ @Vgs=10V 8.5m Fast switching Qg-typ 40nC 100% 100% avalanche tested dv/dt
phd50n06lt.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHP50N06LT, PHB50N06LT, PHD50N06LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 Vd Very low on-state resistance Fast switching ID = 50 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V)g Low thermal
phd50n06lt.pdf
Isc N-Channel MOSFET Transistor PHD50N06LTFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
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