All MOSFET. HU50N06D Datasheet

 

HU50N06D Datasheet and Replacement


   Type Designator: HU50N06D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 40 nC
   tr ⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO251
 

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HU50N06D Datasheet (PDF)

 ..1. Size:2042K  haolin elec
 hd50n06d hu50n06d.pdf pdf_icon

HU50N06D

Nov 2019BVDSS = 60 VRDS(on) = 15 mHD50N06D / HU50N06DID = 50 A60V N-Channel MOSFETTO-252 TO-251FEATURES Originative New DesignHD50N06D HU50N06D Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.)

 0.1. Size:738K  feihonltd
 fhp50n06 fhu50n06d fhd50n06d.pdf pdf_icon

HU50N06D

N N-CHANNEL MOSFET FHP50N06/FHU50N06D/FHD50N06D MAIN CHARACTERISTICS FEATURES ID 50 A Low gate charge VDSS 60 V Crss ( 130pF) Low Crss (typical 130pF ) Rdson-typ @Vgs=10V 8.5m Fast switching Qg-typ 40nC 100% 100% avalanche tested dv/dt

 7.1. Size:299K  feihonltd
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HU50N06D

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: WMK50N06TS

Keywords - HU50N06D MOSFET datasheet

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