HU50N06D PDF and Equivalents Search

 

HU50N06D Specs and Replacement

Type Designator: HU50N06D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 105 nS

Cossⓘ - Output Capacitance: 600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO251

HU50N06D substitution

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HU50N06D datasheet

 ..1. Size:2042K  haolin elec
 hd50n06d hu50n06d.pdf pdf_icon

HU50N06D

Nov 2019 BVDSS = 60 V RDS(on) = 15 m HD50N06D / HU50N06D ID = 50 A 60V N-Channel MOSFET TO-252 TO-251 FEATURES Originative New Design HD50N06D HU50N06D Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 40 nC (Typ.) ... See More ⇒

 0.1. Size:738K  feihonltd
 fhp50n06 fhu50n06d fhd50n06d.pdf pdf_icon

HU50N06D

N N-CHANNEL MOSFET FHP50N06/FHU50N06D/FHD50N06D MAIN CHARACTERISTICS FEATURES ID 50 A Low gate charge VDSS 60 V Crss ( 130pF) Low Crss (typical 130pF ) Rdson-typ @Vgs=10V 8.5m Fast switching Qg-typ 40nC 100% 100% avalanche tested dv/dt... See More ⇒

 7.1. Size:299K  feihonltd
 fhu50n06a fhd50n06a.pdf pdf_icon

HU50N06D

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Detailed specifications: HP3710P, HD1H15A, HD30N03, HU30N03, HD30N06, HU30N06, HD40N04, HD50N06D, K4145, HD5N50, HU5N50, HD60N03, HU60N03, HD60N75, HU60N75, HD60P03, HU60P03

Keywords - HU50N06D MOSFET specs

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