All MOSFET. HD5N50 Datasheet

 

HD5N50 Datasheet and Replacement


   Type Designator: HD5N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 520 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 86 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.55 Ohm
   Package: TO252
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HD5N50 Datasheet (PDF)

 ..1. Size:1853K  haolin elec
 hd5n50 hu5n50.pdf pdf_icon

HD5N50

June 2017BVDSS = 520 VRDS(on) typ = 1.5 HD5N50 / HU5N50ID = 5.0 A520V N-Channel MOSFETTO-252 TO-251FEATURES Originative New DesignHD5N50 HU5N50 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.)

 0.1. Size:198K  vishay
 sihd5n50d.pdf pdf_icon

HD5N50

SiHD5N50Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 1.5 - Low Input Capacitance (Ciss)Qg (max.) (nC) 20- Reduced Capacitive Switching Losses- High Body Diode RuggednessQgs (nC) 3Available- Avalanche Energy Rated (UIS)Qgd

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History: DH150N12 | SRC65R100B

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