HU5N50 Specs and Replacement
Type Designator: HU5N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 520 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 86 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.55 Ohm
Package: TO251
HU5N50 substitution
- MOSFET ⓘ Cross-Reference Search
HU5N50 datasheet
sihu5n50d.pdf
SiHU5N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 1.5 - Low Input Capacitance (Ciss) Qg (max.) (nC) 20 - Reduced Capacitive Switching Losses Qgs (nC) 3 - High Body Diode Ruggedness Qgd (nC) 5 - Avalanche Energy Rated (UIS) ... See More ⇒
Detailed specifications: HD30N03 , HU30N03 , HD30N06 , HU30N06 , HD40N04 , HD50N06D , HU50N06D , HD5N50 , AON7410 , HD60N03 , HU60N03 , HD60N75 , HU60N75 , HD60P03 , HU60P03 , HD70N08 , HU70N08 .
Keywords - HU5N50 MOSFET specs
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