All MOSFET. HU5N50 Datasheet

 

HU5N50 Datasheet and Replacement


   Type Designator: HU5N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 520 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 86 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.55 Ohm
   Package: TO251
 

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HU5N50 Datasheet (PDF)

 ..1. Size:1853K  haolin elec
 hd5n50 hu5n50.pdf pdf_icon

HU5N50

June 2017BVDSS = 520 VRDS(on) typ = 1.5 HD5N50 / HU5N50ID = 5.0 A520V N-Channel MOSFETTO-252 TO-251FEATURES Originative New DesignHD5N50 HU5N50 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.)

 0.1. Size:179K  vishay
 sihu5n50d.pdf pdf_icon

HU5N50

SiHU5N50Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 1.5- Low Input Capacitance (Ciss)Qg (max.) (nC) 20- Reduced Capacitive Switching LossesQgs (nC) 3- High Body Diode RuggednessQgd (nC) 5 - Avalanche Energy Rated (UIS)

Datasheet: HD30N03 , HU30N03 , HD30N06 , HU30N06 , HD40N04 , HD50N06D , HU50N06D , HD5N50 , 5N60 , HD60N03 , HU60N03 , HD60N75 , HU60N75 , HD60P03 , HU60P03 , HD70N08 , HU70N08 .

History: SHDC225456 | 2SK3797 | IXFE55N50 | KF5N50PS | BL5N50-D | BLF6G10-160RN | IRF7410PBF

Keywords - HU5N50 MOSFET datasheet

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