HU60N03 MOSFET Datasheet: N-Ch, 30V, 60A. Full specification with pinout and replacement list

HU60N03 Specs and Replacement

Type Designator: HU60N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 155 nS

Cossⓘ - Output Capacitance: 570 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: TO251

HU60N03 substitution

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HU60N03 datasheet

..1. Size:2558K haolin elec
hd60n03 hu60n03.pdf pdf_icon

Nov 2009 BVDSS = 30 V RDS(on) = 0.014 HD60N03 / HU60N03 ID = 60 A 30V N-Channel MOSFET TO-252 TO-251 FEATURES Originative New Design HD60N03 HU60N03 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 18.5 nC (Typ.) E... See More ⇒

9.1. Size:2721K haolin elec
hd60n75 hu60n75.pdf pdf_icon

Nov 2009 BVDSS = 75V RDS(on) = 16 m HD60N75 / HU60N75 ID = 60 A 75V N-Channel MOSFET TO-252 TO-251 FEATURES Originative New Design HD60N75 HU60N75 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 40 nC (Typ.) Exten... See More ⇒

Detailed specifications: HD30N06, HU30N06, HD40N04, HD50N06D, HU50N06D, HD5N50, HU5N50, HD60N03, 5N65, HD60N75, HU60N75, HD60P03, HU60P03, HD70N08, HU70N08, HD830, HU830