All MOSFET. HU60N03 Datasheet

 

HU60N03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HU60N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18.5 nC
   trⓘ - Rise Time: 155 nS
   Cossⓘ - Output Capacitance: 570 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO251

 HU60N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HU60N03 Datasheet (PDF)

 ..1. Size:2558K  haolin elec
 hd60n03 hu60n03.pdf

HU60N03 HU60N03

Nov 2009BVDSS = 30 VRDS(on) = 0.014HD60N03 / HU60N03ID = 60 A30V N-Channel MOSFETTO-252 TO-251FEATURES Originative New DesignHD60N03 HU60N03 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 18.5 nC (Typ.) E

 9.1. Size:2721K  haolin elec
 hd60n75 hu60n75.pdf

HU60N03 HU60N03

Nov 2009BVDSS = 75VRDS(on) = 16 mHD60N75 / HU60N75ID = 60 A75V N-Channel MOSFETTO-252 TO-251FEATURES Originative New DesignHD60N75 HU60N75 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.) Exten

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: SPN4412WS8RG

 

 
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