All MOSFET. HU60N03 Datasheet

 

HU60N03 Datasheet and Replacement


   Type Designator: HU60N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 155 nS
   Cossⓘ - Output Capacitance: 570 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO251
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HU60N03 Datasheet (PDF)

 ..1. Size:2558K  haolin elec
 hd60n03 hu60n03.pdf pdf_icon

HU60N03

Nov 2009BVDSS = 30 VRDS(on) = 0.014HD60N03 / HU60N03ID = 60 A30V N-Channel MOSFETTO-252 TO-251FEATURES Originative New DesignHD60N03 HU60N03 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 18.5 nC (Typ.) E

 9.1. Size:2721K  haolin elec
 hd60n75 hu60n75.pdf pdf_icon

HU60N03

Nov 2009BVDSS = 75VRDS(on) = 16 mHD60N75 / HU60N75ID = 60 A75V N-Channel MOSFETTO-252 TO-251FEATURES Originative New DesignHD60N75 HU60N75 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.) Exten

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK957-01 | BRCS5N10MC | JMTL2302A | 4N100L-TA3-T

Keywords - HU60N03 MOSFET datasheet

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