HD60P03 MOSFET. Datasheet pdf. Equivalent
Type Designator: HD60P03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 258 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: TO252
HD60P03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HD60P03 Datasheet (PDF)
hd60p03 hu60p03.pdf
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HD60P03 / HU60P03 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The 60P03 uses advanced trench technology to provide BVDSS = -30Vexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. mRDS(on) typ =13 ID = -50 AGENERAL FEATURES VDS = -30V,ID = -20A TO-252 TO-251RDS(ON)
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