All MOSFET. HD830 Datasheet

 

HD830 Datasheet and Replacement


   Type Designator: HD830
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 15.5 nC
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 86 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO252
 

 HD830 substitution

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HD830 Datasheet (PDF)

 ..1. Size:1646K  haolin elec
 hd830 hu830.pdf pdf_icon

HD830

June 2009BVDSS = 550 VRDS(on) typ = 1.5 HD830 / HU830ID = 5 A550V N-Channel MOSFETTO-252 TO-251FEATURES Originative New DesignHD830 HU830 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.) Exte

 0.1. Size:3032K  haolin elec
 hd830u hu830u.pdf pdf_icon

HD830

June 2014BVDSS = 550 VRDS(on) typ = 1.1 HD830U / HU830UID = 5.0 A550V N-Channel MOSFETTO-252 TO-251FEATURES Originative New DesignHD830U HU830U Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.)

Datasheet: HD60N03 , HU60N03 , HD60N75 , HU60N75 , HD60P03 , HU60P03 , HD70N08 , HU70N08 , AON7506 , HU830 , HD830U , HU830U , HD840U , HU840U , HF10N60 , HF12N60 , HF20N50 .

Keywords - HD830 MOSFET datasheet

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