HD830 MOSFET. Datasheet pdf. Equivalent
Type Designator: HD830
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15.5 nC
trⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 86 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO252
HD830 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HD830 Datasheet (PDF)
hd830 hu830.pdf
June 2009BVDSS = 550 VRDS(on) typ = 1.5 HD830 / HU830ID = 5 A550V N-Channel MOSFETTO-252 TO-251FEATURES Originative New DesignHD830 HU830 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.) Exte
hd830u hu830u.pdf
June 2014BVDSS = 550 VRDS(on) typ = 1.1 HD830U / HU830UID = 5.0 A550V N-Channel MOSFETTO-252 TO-251FEATURES Originative New DesignHD830U HU830U Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.)
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
