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HD830U Spec and Replacement


   Type Designator: HD830U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 86 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO252

 HD830U Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HD830U Specs

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HD830U

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HD830U

June 2009 BVDSS = 550 V RDS(on) typ = 1.5 HD830 / HU830 ID = 5 A 550V N-Channel MOSFET TO-252 TO-251 FEATURES Originative New Design HD830 HU830 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 15.5 nC (Typ.) Exte... See More ⇒

Detailed specifications: HD60N75 , HU60N75 , HD60P03 , HU60P03 , HD70N08 , HU70N08 , HD830 , HU830 , IRFP450 , HU830U , HD840U , HU840U , HF10N60 , HF12N60 , HF20N50 , HP20N50 , HF20N60 .

History: FDBL86361F085

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