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HU830U Specs and Replacement

Type Designator: HU830U

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 86 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: TO251

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HU830U datasheet

 ..1. Size:3032K  haolin elec
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HU830U

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 9.1. Size:1646K  haolin elec
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HU830U

June 2009 BVDSS = 550 V RDS(on) typ = 1.5 HD830 / HU830 ID = 5 A 550V N-Channel MOSFET TO-252 TO-251 FEATURES Originative New Design HD830 HU830 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 15.5 nC (Typ.) Exte... See More ⇒

Detailed specifications: HU60N75, HD60P03, HU60P03, HD70N08, HU70N08, HD830, HU830, HD830U, TK10A60D, HD840U, HU840U, HF10N60, HF12N60, HF20N50, HP20N50, HF20N60, HP20N60

Keywords - HU830U MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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