All MOSFET. HU830U Datasheet

 

HU830U Datasheet and Replacement


   Type Designator: HU830U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 86 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO251
 

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HU830U Datasheet (PDF)

 ..1. Size:3032K  haolin elec
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HU830U

June 2014BVDSS = 550 VRDS(on) typ = 1.1 HD830U / HU830UID = 5.0 A550V N-Channel MOSFETTO-252 TO-251FEATURES Originative New DesignHD830U HU830U Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.)

 9.1. Size:1646K  haolin elec
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HU830U

June 2009BVDSS = 550 VRDS(on) typ = 1.5 HD830 / HU830ID = 5 A550V N-Channel MOSFETTO-252 TO-251FEATURES Originative New DesignHD830 HU830 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.) Exte

Datasheet: HU60N75 , HD60P03 , HU60P03 , HD70N08 , HU70N08 , HD830 , HU830 , HD830U , TK10A60D , HD840U , HU840U , HF10N60 , HF12N60 , HF20N50 , HP20N50 , HF20N60 , HP20N60 .

History: SIS407ADN | SIS402DN | AOC3860 | HU840U

Keywords - HU830U MOSFET datasheet

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