HU840U MOSFET. Datasheet pdf. Equivalent
Type Designator: HU840U
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 135 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 25 nC
trⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 130 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO251
HU840U Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HU840U Datasheet (PDF)
..1. Size:2494K haolin elec
hd840u hu840u.pdf
hd840u hu840u.pdf
Sep 2011 BVDSS = 500 V RDS(on) typ = 0.75 HD840U/HU840U ID = 8.0 A 500V N-Channel MOSFET TO-251TO-252FEATURES Originative New Design Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 25 nC (Typ.) Ex
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
