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HU840U Specs and Replacement

Type Designator: HU840U

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 135 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO251

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HU840U datasheet

 ..1. Size:2494K  haolin elec
 hd840u hu840u.pdf pdf_icon

HU840U

Sep 2011 BVDSS = 500 V RDS(on) typ = 0.75 HD840U/HU840U ID = 8.0 A 500V N-Channel MOSFET TO-251 TO-252 FEATURES Originative New Design Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 25 nC (Typ.) Ex... See More ⇒

Detailed specifications: HU60P03, HD70N08, HU70N08, HD830, HU830, HD830U, HU830U, HD840U, BS170, HF10N60, HF12N60, HF20N50, HP20N50, HF20N60, HP20N60, HF25N50, HP25N50

Keywords - HU840U MOSFET specs

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