All MOSFET. HU840U Datasheet

 

HU840U Datasheet and Replacement


   Type Designator: HU840U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 135 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO251
 

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HU840U Datasheet (PDF)

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HU840U

Sep 2011 BVDSS = 500 V RDS(on) typ = 0.75 HD840U/HU840U ID = 8.0 A 500V N-Channel MOSFET TO-251TO-252FEATURES Originative New Design Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 25 nC (Typ.) Ex

Datasheet: HU60P03 , HD70N08 , HU70N08 , HD830 , HU830 , HD830U , HU830U , HD840U , 18N50 , HF10N60 , HF12N60 , HF20N50 , HP20N50 , HF20N60 , HP20N60 , HF25N50 , HP25N50 .

History: JFFM18N60C | SVF18N65EFJH

Keywords - HU840U MOSFET datasheet

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