HF20N50 MOSFET. Datasheet pdf. Equivalent
Type Designator: HF20N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 98 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 231 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm
Package: TO220F
HF20N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HF20N50 Datasheet (PDF)
hf20n50 hp20n50.pdf
HF20N50,HP20N50500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Absolute Maximum Ratings TC = 25 unless otherwise notedC,Parameter Symbol Value UnitDrain-Source Voltage (VGS = 0V) VDSS 500 VContinu
fhf20n65a fhp20n65a fha20n65a.pdf
N N-CHANNEL MOSFET FHF20N65A/ FHP20N65A/FHA20N65A MAIN CHARACTERISTICS FEATURES Low gate charge ID 20A Crss ( 20pF) Low Crss (typical 20pF ) VDSS 650V Fast switching Rdson-typ 0.35 @Vgs=10V 100% 100% avalanche tested P (T =25) 85W D C
fhf20n60a fhp20n60a fha20n60a.pdf
N N-CHANNEL MOSFET FHF20N60A/ FHP20N60A/FHA20N60A MAIN CHARACTERISTICS FEATURES Low gate charge ID 20A Crss ( 20pF) Low Crss (typical 20pF ) VDSS 600V Fast switching Rdson-typ 0.32 @Vgs=10V 100% 100% avalanche tested P (T =25) 85W D C
hf20n60 hp20n60.pdf
HF20N60,HP20N60600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Absolute Maximum Ratings TC = 25 unless otherwise notedC,ValueParameter Symbol UnitTO-220TO-220F/ Drain-Source Voltage (VGS = 0V)
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
