HF20N50 Datasheet and Replacement
Type Designator: HF20N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 98 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 231 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm
Package: TO220F
HF20N50 substitution
HF20N50 Datasheet (PDF)
hf20n50 hp20n50.pdf

HF20N50,HP20N50500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Absolute Maximum Ratings TC = 25 unless otherwise notedC,Parameter Symbol Value UnitDrain-Source Voltage (VGS = 0V) VDSS 500 VContinu
fhf20n65a fhp20n65a fha20n65a.pdf

N N-CHANNEL MOSFET FHF20N65A/ FHP20N65A/FHA20N65A MAIN CHARACTERISTICS FEATURES Low gate charge ID 20A Crss ( 20pF) Low Crss (typical 20pF ) VDSS 650V Fast switching Rdson-typ 0.35 @Vgs=10V 100% 100% avalanche tested P (T =25) 85W D C
fhf20n60a fhp20n60a fha20n60a.pdf

N N-CHANNEL MOSFET FHF20N60A/ FHP20N60A/FHA20N60A MAIN CHARACTERISTICS FEATURES Low gate charge ID 20A Crss ( 20pF) Low Crss (typical 20pF ) VDSS 600V Fast switching Rdson-typ 0.32 @Vgs=10V 100% 100% avalanche tested P (T =25) 85W D C
Datasheet: HD830 , HU830 , HD830U , HU830U , HD840U , HU840U , HF10N60 , HF12N60 , RFP50N06 , HP20N50 , HF20N60 , HP20N60 , HF25N50 , HP25N50 , HF5N65 , HF640 , HP640 .
History: UPA1818GR | IPAN80R360P7 | SIS330DN | PSMN5R0-80BS | TPA65R160C | TPV65R160C | MS60P02NE
Keywords - HF20N50 MOSFET datasheet
HF20N50 cross reference
HF20N50 equivalent finder
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History: UPA1818GR | IPAN80R360P7 | SIS330DN | PSMN5R0-80BS | TPA65R160C | TPV65R160C | MS60P02NE



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