HF20N60 Specs and Replacement
Type Designator: HF20N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 66 nS
Cossⓘ - Output Capacitance: 291 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO220F
HF20N60 substitution
- MOSFET ⓘ Cross-Reference Search
HF20N60 datasheet
hf20n60 hp20n60.pdf
HF20N60,HP20N60 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Absolute Maximum Ratings TC = 25 unless otherwise noted C, Value Parameter Symbol Unit TO-220 TO-220F/ Drain-Source Voltage (VGS = 0V)... See More ⇒
Detailed specifications: HD830U, HU830U, HD840U, HU840U, HF10N60, HF12N60, HF20N50, HP20N50, 10N65, HP20N60, HF25N50, HP25N50, HF5N65, HF640, HP640, HFS13N50, HP120N04
Keywords - HF20N60 MOSFET specs
HF20N60 cross reference
HF20N60 equivalent finder
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HF20N60 substitution
HF20N60 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: IPD70R600CE
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