HF20N60 Datasheet and Replacement
Type Designator: HF20N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 66 nS
Cossⓘ - Output Capacitance: 291 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO220F
HF20N60 substitution
HF20N60 Datasheet (PDF)
hf20n60 hp20n60.pdf

HF20N60,HP20N60600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Absolute Maximum Ratings TC = 25 unless otherwise notedC,ValueParameter Symbol UnitTO-220TO-220F/ Drain-Source Voltage (VGS = 0V)
fhf20n60a fhp20n60a fha20n60a.pdf

N N-CHANNEL MOSFET FHF20N60A/ FHP20N60A/FHA20N60A MAIN CHARACTERISTICS FEATURES Low gate charge ID 20A Crss ( 20pF) Low Crss (typical 20pF ) VDSS 600V Fast switching Rdson-typ 0.32 @Vgs=10V 100% 100% avalanche tested P (T =25) 85W D C
fhf20n65a fhp20n65a fha20n65a.pdf

N N-CHANNEL MOSFET FHF20N65A/ FHP20N65A/FHA20N65A MAIN CHARACTERISTICS FEATURES Low gate charge ID 20A Crss ( 20pF) Low Crss (typical 20pF ) VDSS 650V Fast switching Rdson-typ 0.35 @Vgs=10V 100% 100% avalanche tested P (T =25) 85W D C
Datasheet: HD830U , HU830U , HD840U , HU840U , HF10N60 , HF12N60 , HF20N50 , HP20N50 , STP80NF70 , HP20N60 , HF25N50 , HP25N50 , HF5N65 , HF640 , HP640 , HFS13N50 , HP120N04 .
Keywords - HF20N60 MOSFET datasheet
HF20N60 cross reference
HF20N60 equivalent finder
HF20N60 lookup
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History: HD830 | BRF13N50



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