HF5N65 Datasheet and Replacement
Type Designator: HF5N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 65 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
Package: TO220F
HF5N65 substitution
HF5N65 Datasheet (PDF)
hf5n65.pdf

July 2005BVDSS = 650 VRDS(on) typ = 2.8 HF5N65ID = 5.0 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15 nC (Typ.) Extended Safe Operati
fhu5n65b fhd5n65b fhp5n65b fhf5n65b.pdf

N N-CHANNEL MOSFET FHU5N65B/FHD5N65B/FHP5N65B/FHF5N65B MAIN CHARACTERISTICS FEATURES ID 5A Low gate charge VDSS 650V Crss ( 3.5pF) Low Crss (typical 3.5pF ) Rdson-typ @Vgs=10V 2.4 Fast switching Qg-typ 14.5nC 100% 100% avalanche tested
fhu5n65c fhd5n65c fhp5n65c fhf5n65c.pdf

N N-CHANNEL MOSFET FHU5N65C/FHD5N65C/FHP5N65C/FHF5N65C MAIN CHARACTERISTICS FEATURES ID 5A Low gate charge VDSS 650V Crss ( 3.5pF) Low Crss (typical 3.5pF ) Rdson-typ @Vgs=10V 2.1 Fast switching Qg-typ 14.5nC 100% 100% avalanche tested
fhu5n60a fhd5n60a fhp5n60a fhf5n60a.pdf

N N-CHANNEL MOSFET FHU5N60A/FHD5N60A /FHP5N60A /FHF5N60A MAIN CHARACTERISTICS FEATURES ID 5A Low gate charge VDSS 600V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 1.7 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested
Datasheet: HF10N60 , HF12N60 , HF20N50 , HP20N50 , HF20N60 , HP20N60 , HF25N50 , HP25N50 , 7N60 , HF640 , HP640 , HFS13N50 , HP120N04 , HP16N10 , HF16N10 , HP60N75 , HP80N80 .
Keywords - HF5N65 MOSFET datasheet
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