HP16N10 Datasheet. Specs and Replacement
Type Designator: HP16N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 98 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 173 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.098 Ohm
Package: TO220
HP16N10 substitution
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HP16N10 datasheet
hp16n10 hf16n10.pdf
H P16N10,H F16N10 100V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Absolute Maximum Ratings TC = 25 unless otherwise noted C, Value Parameter Symbol Unit TO220F TO-220 Drain-Source Voltage (VGS = 0V) V... See More ⇒
sihp16n50c sihb16n50c sihf16n50c.pdf
SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 RDS(on) ( )VGS = 10 V 0.38 100 % Avalanche Tested Qg (Max.) (nC) 68 Gate Charge Improved Qgs (nC) 17.6 Trr/Qrr Improved Qgd (nC) 21.8 Configuration Single Compliant to RoHS Directive 2002/95/EC TO-220A... See More ⇒
sihb16n50c sihf16n50c sihp16n50c.pdf
SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 RDS(on) ( )VGS = 10 V 0.38 100 % Avalanche Tested Qg (Max.) (nC) 68 Gate Charge Improved Qgs (nC) 17.6 Trr/Qrr Improved Qgd (nC) 21.8 Configuration Single Compliant to RoHS Directive 2002/95/EC TO-220A... See More ⇒
Detailed specifications: HP20N60, HF25N50, HP25N50, HF5N65, HF640, HP640, HFS13N50, HP120N04, STF13NM60N, HF16N10, HP60N75, HP80N80, HY029N10P, HY029N10B, HY030N06C2, HY045N10P, HY045N10B
Keywords - HP16N10 MOSFET specs
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