All MOSFET. HF16N10 Datasheet

 

HF16N10 Datasheet and Replacement


   Type Designator: HF16N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 173 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.098 Ohm
   Package: TO220F
 

 HF16N10 substitution

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HF16N10 Datasheet (PDF)

 ..1. Size:4770K  haolin elec
 hp16n10 hf16n10.pdf pdf_icon

HF16N10

H P16N10,H F16N10100V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Absolute Maximum Ratings TC = 25 unless otherwise notedC,ValueParameter Symbol UnitTO220F TO-220Drain-Source Voltage (VGS = 0V) V

 9.1. Size:292K  vishay
 sihp16n50c sihb16n50c sihf16n50c.pdf pdf_icon

HF16N10

SiHP16N50C, SiHB16N50C, SiHF16N50Cwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit Ron x QgVDS (V) at TJ max. 560RDS(on) ()VGS = 10 V 0.38 100 % Avalanche TestedQg (Max.) (nC) 68 Gate Charge ImprovedQgs (nC) 17.6 Trr/Qrr ImprovedQgd (nC) 21.8Configuration Single Compliant to RoHS Directive 2002/95/ECTO-220A

 9.2. Size:175K  vishay
 sihb16n50c sihf16n50c sihp16n50c.pdf pdf_icon

HF16N10

SiHP16N50C, SiHB16N50C, SiHF16N50Cwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit Ron x QgVDS (V) at TJ max. 560RDS(on) ()VGS = 10 V 0.38 100 % Avalanche TestedQg (Max.) (nC) 68 Gate Charge ImprovedQgs (nC) 17.6 Trr/Qrr ImprovedQgd (nC) 21.8Configuration Single Compliant to RoHS Directive 2002/95/ECTO-220A

 9.3. Size:1349K  cn wxdh
 dh16n06 dhf16n06 dhi16n06 dhe16n06 dhb16n06 dhd16n06.pdf pdf_icon

HF16N10

DH16N06/DHF16N06/DHI16N06/DHE16N06/DHB16N06/DHD16N0661A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel Enhanced VDMOSFETs Used by the2 DVDSS = 60Vself-aligned planar technology which reduce theconduction loss, improve switching performance andRDS = 16m(on) (TYP)Genhance the avalanche energy. Which accords with the1RoHS standard. ID = 61A3

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Datasheet: HF25N50 , HP25N50 , HF5N65 , HF640 , HP640 , HFS13N50 , HP120N04 , HP16N10 , AON6380 , HP60N75 , HP80N80 , HY029N10P , HY029N10B , HY030N06C2 , HY045N10P , HY045N10B , HY050N08C2 .

History: MPSY65M390 | ELM14430AA | IXTH6N150 | RJK0629DPE | 2SJ604 | PA203EMG | VS3622AD

Keywords - HF16N10 MOSFET datasheet

 HF16N10 cross reference
 HF16N10 equivalent finder
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