HF16N10 - аналоги, параметры транзистора - Справочник транзисторов

HF16N10 даташит

..1. Size:4770K haolin elec
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H P16N10,H F16N10 100V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Absolute Maximum Ratings TC = 25 unless otherwise noted C, Value Parameter Symbol Unit TO220F TO-220 Drain-Source Voltage (VGS = 0V) V

9.1. Size:292K vishay
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SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 RDS(on) ( )VGS = 10 V 0.38 100 % Avalanche Tested Qg (Max.) (nC) 68 Gate Charge Improved Qgs (nC) 17.6 Trr/Qrr Improved Qgd (nC) 21.8 Configuration Single Compliant to RoHS Directive 2002/95/EC TO-220A

9.2. Size:175K vishay
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9.3. Size:1349K cn wxdh
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DH16N06/DHF16N06/DHI16N06/ DHE16N06/DHB16N06/DHD16N06 61A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used by the 2 D VDSS = 60V self-aligned planar technology which reduce the conduction loss, improve switching performance and RDS = 16m (on) (TYP) G enhance the avalanche energy. Which accords with the 1 RoHS standard. ID = 61A 3

Другие MOSFET... HF25N50 , HP25N50 , HF5N65 , HF640 , HP640 , HFS13N50 , HP120N04 , HP16N10 , IRFZ24N , HP60N75 , HP80N80 , HY029N10P , HY029N10B , HY030N06C2 , HY045N10P , HY045N10B , HY050N08C2 .