H P16N10,H F16N10100V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Absolute Maximum Ratings TC = 25 unless otherwise notedC,ValueParameter Symbol UnitTO220F TO-220Drain-Source Voltage (VGS = 0V) V

SiHP16N50C, SiHB16N50C, SiHF16N50Cwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit Ron x QgVDS (V) at TJ max. 560RDS(on) ()VGS = 10 V 0.38 100 % Avalanche TestedQg (Max.) (nC) 68 Gate Charge ImprovedQgs (nC) 17.6 Trr/Qrr ImprovedQgd (nC) 21.8Configuration Single Compliant to RoHS Directive 2002/95/ECTO-220A

SiHP16N50C, SiHB16N50C, SiHF16N50Cwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit Ron x QgVDS (V) at TJ max. 560RDS(on) ()VGS = 10 V 0.38 100 % Avalanche TestedQg (Max.) (nC) 68 Gate Charge ImprovedQgs (nC) 17.6 Trr/Qrr ImprovedQgd (nC) 21.8Configuration Single Compliant to RoHS Directive 2002/95/ECTO-220A

DH16N06/DHF16N06/DHI16N06/DHE16N06/DHB16N06/DHD16N0661A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel Enhanced VDMOSFETs Used by the2 DVDSS = 60Vself-aligned planar technology which reduce theconduction loss, improve switching performance andRDS = 16m(on) (TYP)Genhance the avalanche energy. Which accords with the1RoHS standard. ID = 61A3