HY050N08P Datasheet. Specs and Replacement

Type Designator: HY050N08P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 166 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 105 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 1649 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: TO220

HY050N08P substitution

- MOSFET ⓘ Cross-Reference Search

 

HY050N08P datasheet

 ..1. Size:883K  hymexa
 hy050n08p hy050n08b.pdf pdf_icon

HY050N08P

HY050N08P/B N-Channel Enhancement Mode MOSFET Feature Description Pin Description 85V/105A RDS(ON)= 4.7m (typ.)@VGS = 10V 100% Avalanche Tested S D G Reliable and Rugged S D Lead Free and Green Devices Available G (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Switch application DC/DC Converter Ordering and Marking Information Package Code P B P TO-220FB-... See More ⇒

 6.1. Size:1288K  hymexa
 hy050n08c2.pdf pdf_icon

HY050N08P

HY050N08C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description S S S G D D D D 80V/80A RDS(ON)= 5.2m (typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available (RoHS Compliant) S S S G D D D D PPAK5*6-8L Pin1 Applications High Frequency Point-of-Load Synchronous Buck Converter Power Tool Application Netwo... See More ⇒

Detailed specifications: HP60N75, HP80N80, HY029N10P, HY029N10B, HY030N06C2, HY045N10P, HY045N10B, HY050N08C2, 7N60, HY050N08B, HY0810S, HY0910D, HY0910U, HY0910V, HY0C20C, HY10P10D, HY10P10U

Keywords - HY050N08P MOSFET specs

 HY050N08P cross reference

 HY050N08P equivalent finder

 HY050N08P pdf lookup

 HY050N08P substitution

 HY050N08P replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility