All MOSFET. HY050N08P Datasheet

 

HY050N08P MOSFET. Datasheet pdf. Equivalent


   Type Designator: HY050N08P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 166 W
   Maximum Drain-Source Voltage |Vds|: 85 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 105 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 64.3 nC
   Rise Time (tr): 30 nS
   Drain-Source Capacitance (Cd): 1649 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0055 Ohm
   Package: TO220

 HY050N08P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HY050N08P Datasheet (PDF)

 ..1. Size:883K  hymexa
 hy050n08p hy050n08b.pdf

HY050N08P HY050N08P

HY050N08P/BN-Channel Enhancement Mode MOSFET Feature Description Pin Description 85V/105ARDS(ON)= 4.7m(typ.)@VGS = 10V 100% Avalanche TestedSDG Reliable and RuggedSD Lead Free and Green Devices Available G(RoHS Compliant) TO-220FB-3L TO-263-2LApplications Switch application DC/DC ConverterOrdering and Marking Information Package Code P B P:TO-220FB-

 6.1. Size:1288K  hymexa
 hy050n08c2.pdf

HY050N08P HY050N08P

HY050N08C2Single N-Channel Enhancement Mode MOSFETFeature Pin DescriptionS S S GD D D D 80V/80ARDS(ON)= 5.2m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available(RoHS Compliant)S S S G D D D DPPAK5*6-8LPin1Applications High Frequency Point-of-Load Synchronous Buck Converter Power Tool Application Netwo

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: AON6414A

 

 
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