HY0810S Datasheet. Specs and Replacement

Type Designator: HY0810S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SOP8

HY0810S substitution

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HY0810S datasheet

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HY0810S

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Detailed specifications: HY029N10P, HY029N10B, HY030N06C2, HY045N10P, HY045N10B, HY050N08C2, HY050N08P, HY050N08B, IRFZ46N, HY0910D, HY0910U, HY0910V, HY0C20C, HY10P10D, HY10P10U, HY1103S, HY1106S

Keywords - HY0810S MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.