HY0910D Datasheet. Specs and Replacement

Type Designator: HY0910D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 21 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 52 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.143 Ohm

Package: TO252

HY0910D substitution

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HY0910D datasheet

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HY0910D

S D S S G D D G G S D G TO-251-3L TO-251-3S TO-252-2L N-Channel MOSFET ... See More ⇒

Detailed specifications: HY029N10B, HY030N06C2, HY045N10P, HY045N10B, HY050N08C2, HY050N08P, HY050N08B, HY0810S, IRF830, HY0910U, HY0910V, HY0C20C, HY10P10D, HY10P10U, HY1103S, HY1106S, HY1203S

Keywords - HY0910D MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs