HY0910U MOSFET. Datasheet pdf. Equivalent
Type Designator: HY0910U
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 21 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 52 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.143 Ohm
Package: TO251
HY0910U Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HY0910U Datasheet (PDF)
hy0910d hy0910u hy0910v.pdf
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S DSSGDDGG SDG TO-251-3L TO-251-3STO-252-2L N-Channel MOSFET
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .