HY0910V Datasheet and Replacement
Type Designator: HY0910V
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 21 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 52 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.143 Ohm
Package: TO251
HY0910V substitution
HY0910V Datasheet (PDF)
hy0910d hy0910u hy0910v.pdf
S DSSGDDGG SDG TO-251-3L TO-251-3STO-252-2L N-Channel MOSFET
Datasheet: HY045N10P , HY045N10B , HY050N08C2 , HY050N08P , HY050N08B , HY0810S , HY0910D , HY0910U , IRF9640 , HY0C20C , HY10P10D , HY10P10U , HY1103S , HY1106S , HY1203S , HY1210D , HY1210U .
Keywords - HY0910V MOSFET datasheet
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HY0910V replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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