HY10P10U MOSFET. Datasheet pdf. Equivalent
Type Designator: HY10P10U
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 31.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 340 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.225 Ohm
Package: TO251
HY10P10U Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HY10P10U Datasheet (PDF)
..1. Size:2311K hymexa
hy10p10d hy10p10u.pdf
hy10p10d hy10p10u.pdf
HY10P10D/UP-Channel Enhancement Mode MOSFETFeature Pin Description -100V/-10ARDS(ON)= 187m(typ.)@VGS = -10VRDS(ON)= 208m(typ.)@VGS = -4.5V 100% Avalanche TestedS Reliable and RuggedDG Halogen Free and Green Devices AvailableSD(RoHS Compliant)GTO-252-2L TO-251-3LApplications Power Management for Inverter SystemsP-Channel MOSFETOrdering a
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
