HY10P10U Datasheet. Specs and Replacement

Type Designator: HY10P10U

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 340 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.225 Ohm

Package: TO251

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HY10P10U datasheet

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HY10P10U

HY10P10D/U P-Channel Enhancement Mode MOSFET Feature Pin Description -100V/-10A RDS(ON)= 187m (typ.)@VGS = -10V RDS(ON)= 208m (typ.)@VGS = -4.5V 100% Avalanche Tested S Reliable and Rugged D G Halogen Free and Green Devices Available S D (RoHS Compliant) G TO-252-2L TO-251-3L Applications Power Management for Inverter Systems P-Channel MOSFET Ordering a... See More ⇒

Detailed specifications: HY050N08P, HY050N08B, HY0810S, HY0910D, HY0910U, HY0910V, HY0C20C, HY10P10D, K2611, HY1103S, HY1106S, HY1203S, HY1210D, HY1210U, HY1210V, HY12P03C2, HY12P03S

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