All MOSFET. HY1210U Datasheet

 

HY1210U Datasheet and Replacement


   Type Designator: HY1210U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TO251
 

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HY1210U Datasheet (PDF)

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HY1210U

HY1210D/U/VN-Channel Enhancement Mode MOSFETFeaturePin Description 100V/26ARDS(ON)= 32m(typ.)@VGS = 10VRDS(ON) = 34m(typ.)@VGS = 4.5V 100% Avalanche TestedSSD Reliable and RuggedDGG Halogen Free and Green Devices AvailableSD(RoHS Compliant)GTO-252-2L TO-251-3L TO-251-3SApplications Power Management for Inverter SystemsN-Channel MO

Datasheet: HY0910V , HY0C20C , HY10P10D , HY10P10U , HY1103S , HY1106S , HY1203S , HY1210D , AO3407 , HY1210V , HY12P03C2 , HY12P03S , HY1303C , HY1310D , HY1310U , HY1310V , HY1403D .

History: BLP14N08L-D | P3606BEA | GT15N10S | UPA1913 | APT5014B2VRG | RJK5014DPP-E0 | SVS7N60DD2TR

Keywords - HY1210U MOSFET datasheet

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