HY1210U Datasheet. Specs and Replacement
Type Designator: HY1210U
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 38 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: TO251
HY1210U substitution
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HY1210U datasheet
hy1210d hy1210u hy1210v.pdf
HY1210D/U/V N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/26A RDS(ON)= 32m (typ.)@VGS = 10V RDS(ON) = 34m (typ.)@VGS = 4.5V 100% Avalanche Tested S S D Reliable and Rugged D G G Halogen Free and Green Devices Available S D (RoHS Compliant) G TO-252-2L TO-251-3L TO-251-3S Applications Power Management for Inverter Systems N-Channel MO... See More ⇒
Detailed specifications: HY0910V, HY0C20C, HY10P10D, HY10P10U, HY1103S, HY1106S, HY1203S, HY1210D, AO4407A, HY1210V, HY12P03C2, HY12P03S, HY1303C, HY1310D, HY1310U, HY1310V, HY1403D
Keywords - HY1210U MOSFET specs
HY1210U cross reference
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HY1210U substitution
HY1210U replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: HY1210V
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