HY12P03S Datasheet. Specs and Replacement

Type Designator: HY12P03S

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 370 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: SOP8

HY12P03S substitution

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HY12P03S datasheet

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HY12P03S

HY12P03S P -Channel Enhancement Mode MOSFET Features Pin Description -30 / -12A V D D 11.5 RDS(ON)= m (typ.) @ VGS=-10V D D 16.5 RDS(ON)= m (typ.) @ VGS=-4.5V Avalanche Rated S S S Reliable and Rugged G Lead Free and Green Devices Available Top View of SOP-8 (RoHS Compliant) pplications A Power Management in DC/DC Converter P-Channel MOSFET Ordering and... See More ⇒

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HY12P03S

HY12P03C2 P-Channel Enhancement Mode MOSFET Feature Description Pin Description -30V/-50A D D D D D D D D RDS(ON)= 10.4m (typ.) @VGS = -10V RDS(ON)= 14.2m (typ.) @VGS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available S S S G G S S S Pin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Po... See More ⇒

 7.2. Size:1756K  hymexa
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HY12P03S

HY12P03C2 P-Channel Enhancement Mode MOSFET Feature Description Pin Description -30V/-50A D D D D D D D D RDS(ON)= 10.4m (typ.) @VGS = -10V RDS(ON)= 14.2m (typ.) @VGS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available S S S G G S S S Pin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Po... See More ⇒

Detailed specifications: HY10P10U, HY1103S, HY1106S, HY1203S, HY1210D, HY1210U, HY1210V, HY12P03C2, AO4468, HY1303C, HY1310D, HY1310U, HY1310V, HY1403D, HY1403U, HY1403V, HY1503C1

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