HY12P03S MOSFET. Datasheet pdf. Equivalent
Type Designator: HY12P03S
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 34 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 370 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: SOP8
HY12P03S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HY12P03S Datasheet (PDF)
hy12p03s.pdf
HY12P03SP -Channel Enhancement Mode MOSFETFeatures Pin Description -30 / -12AVDD11.5 RDS(ON)= m (typ.) @ VGS=-10VDD16.5RDS(ON)= m (typ.) @ VGS=-4.5VAvalanche Rated SSS Reliable and RuggedG Lead Free and Green Devices AvailableTop View of SOP-8(RoHS Compliant)pplicationsA Power Management in DC/DC ConverterP-Channel MOSFETOrdering and
hy12p03c2.pdf
HY12P03C2 P-Channel Enhancement Mode MOSFETFeature Description Pin Description -30V/-50AD D D D D D D DRDS(ON)= 10.4m(typ.) @VGS = -10VRDS(ON)= 14.2m(typ.) @VGS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S SPin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Po
hy12p03c2.pdf
HY12P03C2 P-Channel Enhancement Mode MOSFETFeature Description Pin Description -30V/-50AD D D D D D D DRDS(ON)= 10.4m(typ.) @VGS = -10VRDS(ON)= 14.2m(typ.) @VGS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S SPin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Po
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
