All MOSFET. HY12P03S Datasheet

 

HY12P03S Datasheet and Replacement


   Type Designator: HY12P03S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: SOP8
 

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HY12P03S Datasheet (PDF)

 ..1. Size:5141K  hymexa
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HY12P03S

HY12P03SP -Channel Enhancement Mode MOSFETFeatures Pin Description -30 / -12AVDD11.5 RDS(ON)= m (typ.) @ VGS=-10VDD16.5RDS(ON)= m (typ.) @ VGS=-4.5VAvalanche Rated SSS Reliable and RuggedG Lead Free and Green Devices AvailableTop View of SOP-8(RoHS Compliant)pplicationsA Power Management in DC/DC ConverterP-Channel MOSFETOrdering and

 7.1. Size:1756K  1
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HY12P03S

HY12P03C2 P-Channel Enhancement Mode MOSFETFeature Description Pin Description -30V/-50AD D D D D D D DRDS(ON)= 10.4m(typ.) @VGS = -10VRDS(ON)= 14.2m(typ.) @VGS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S SPin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Po

 7.2. Size:1756K  hymexa
 hy12p03c2.pdf pdf_icon

HY12P03S

HY12P03C2 P-Channel Enhancement Mode MOSFETFeature Description Pin Description -30V/-50AD D D D D D D DRDS(ON)= 10.4m(typ.) @VGS = -10VRDS(ON)= 14.2m(typ.) @VGS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S SPin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Po

Datasheet: HY10P10U , HY1103S , HY1106S , HY1203S , HY1210D , HY1210U , HY1210V , HY12P03C2 , AO4468 , HY1303C , HY1310D , HY1310U , HY1310V , HY1403D , HY1403U , HY1403V , HY1503C1 .

History: IRF7314 | IRF7342

Keywords - HY12P03S MOSFET datasheet

 HY12P03S cross reference
 HY12P03S equivalent finder
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