All MOSFET. HY1310D Datasheet

 

HY1310D Datasheet and Replacement


   Type Designator: HY1310D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 33 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TO252
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HY1310D Datasheet (PDF)

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HY1310D

HY1310D/U/VN-Channel Enhancement Mode MOSFETFeatures Pin Description 100 V/ 33 A,RDS(ON)=19.5 m(typ.) @ VGS=10VRDS(ON)=20.5m(typ.) @ VGS=4.5V Avalanche RatedSS Reliable and RuggedDDGG Lead Free and Green Devices AvailableS(RoHS Compliant) DGTO-251-3L TO-251-3STO-252-2LApplications Power Management for Inverter Systems.N-Ch

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: QM0020AP | FS2KM-18A | SVGP107R0NL5 | GSM3410 | HGP053N06SL | SIHFR9012 | MTW14N50E

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