All MOSFET. HY1310D Datasheet

 

HY1310D Datasheet and Replacement


   Type Designator: HY1310D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TO252
 

 HY1310D substitution

   - MOSFET ⓘ Cross-Reference Search

 

HY1310D Datasheet (PDF)

 ..1. Size:606K  hymexa
 hy1310d hy1310u hy1310v.pdf pdf_icon

HY1310D

HY1310D/U/VN-Channel Enhancement Mode MOSFETFeatures Pin Description 100 V/ 33 A,RDS(ON)=19.5 m(typ.) @ VGS=10VRDS(ON)=20.5m(typ.) @ VGS=4.5V Avalanche RatedSS Reliable and RuggedDDGG Lead Free and Green Devices AvailableS(RoHS Compliant) DGTO-251-3L TO-251-3STO-252-2LApplications Power Management for Inverter Systems.N-Ch

Datasheet: HY1106S , HY1203S , HY1210D , HY1210U , HY1210V , HY12P03C2 , HY12P03S , HY1303C , IRFZ44N , HY1310U , HY1310V , HY1403D , HY1403U , HY1403V , HY1503C1 , HY1506C2 , HY15P03C2 .

History: HGT025N10A | AOB298L | PH1955L | WFF630 | AP2N7002K-HF | RSD140P06 | HCD6NC70S

Keywords - HY1310D MOSFET datasheet

 HY1310D cross reference
 HY1310D equivalent finder
 HY1310D lookup
 HY1310D substitution
 HY1310D replacement

 

 
Back to Top

 


 
.