All MOSFET. HY1310U Datasheet

 

HY1310U Datasheet and Replacement


   Type Designator: HY1310U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TO251
 

 HY1310U substitution

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HY1310U Datasheet (PDF)

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HY1310U

HY1310D/U/VN-Channel Enhancement Mode MOSFETFeatures Pin Description 100 V/ 33 A,RDS(ON)=19.5 m(typ.) @ VGS=10VRDS(ON)=20.5m(typ.) @ VGS=4.5V Avalanche RatedSS Reliable and RuggedDDGG Lead Free and Green Devices AvailableS(RoHS Compliant) DGTO-251-3L TO-251-3STO-252-2LApplications Power Management for Inverter Systems.N-Ch

Datasheet: HY1203S , HY1210D , HY1210U , HY1210V , HY12P03C2 , HY12P03S , HY1303C , HY1310D , IRF3205 , HY1310V , HY1403D , HY1403U , HY1403V , HY1503C1 , HY1506C2 , HY15P03C2 , HY15P03S .

History: SM4040DSK | AON6242 | IXFT70N15 | ELM5B801QA | AON6266 | KRLML6401 | S45N17RP

Keywords - HY1310U MOSFET datasheet

 HY1310U cross reference
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