All MOSFET. HY1310V Datasheet

 

HY1310V Datasheet and Replacement


   Type Designator: HY1310V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TO251
 

 HY1310V substitution

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HY1310V Datasheet (PDF)

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 hy1310d hy1310u hy1310v.pdf pdf_icon

HY1310V

HY1310D/U/VN-Channel Enhancement Mode MOSFETFeatures Pin Description 100 V/ 33 A,RDS(ON)=19.5 m(typ.) @ VGS=10VRDS(ON)=20.5m(typ.) @ VGS=4.5V Avalanche RatedSS Reliable and RuggedDDGG Lead Free and Green Devices AvailableS(RoHS Compliant) DGTO-251-3L TO-251-3STO-252-2LApplications Power Management for Inverter Systems.N-Ch

Datasheet: HY1210D , HY1210U , HY1210V , HY12P03C2 , HY12P03S , HY1303C , HY1310D , HY1310U , IRF740 , HY1403D , HY1403U , HY1403V , HY1503C1 , HY1506C2 , HY15P03C2 , HY15P03S , HY1603D .

History: SWP17N80K | APT6029BLL | AM2394NE | CEU06N7 | KPA1764 | APT38N60BC6 | HSU60P03

Keywords - HY1310V MOSFET datasheet

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