HY1310V Datasheet. Specs and Replacement

Type Designator: HY1310V

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 33 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: TO251

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HY1310V datasheet

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HY1310V

HY1310D/U/V N-Channel Enhancement Mode MOSFET Features Pin Description 100 V/ 33 A, RDS(ON)=19.5 m (typ.) @ VGS=10V RDS(ON)=20.5m (typ.) @ VGS=4.5V Avalanche Rated S S Reliable and Rugged D D G G Lead Free and Green Devices Available S (RoHS Compliant) D G TO-251-3L TO-251-3S TO-252-2L Applications Power Management for Inverter Systems. N-Ch... See More ⇒

Detailed specifications: HY1210D, HY1210U, HY1210V, HY12P03C2, HY12P03S, HY1303C, HY1310D, HY1310U, IRF740, HY1403D, HY1403U, HY1403V, HY1503C1, HY1506C2, HY15P03C2, HY15P03S, HY1603D

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