HY1503C1 Datasheet: MOSFET, N-Ch, 30V, 34A. Full specification with pinout and replacement list

HY1503C1 Datasheet. Specs and Replacement

Type Designator: HY1503C1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 17.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 34 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12.5 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: DFN3X3-8L

HY1503C1 substitution

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HY1503C1 datasheet

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HY1503C1 Single N-Channel Enhancement Mode MOSFET Feature Pin Description D D D D 30V/34A RDS(ON)= 7.1m (typ.)@VGS = 10V RDS(ON)= 10.0 m (typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged G S S S Halogen Free and Green Devices Available Pin1 (RoHS Compliant) DFN3*3-8L Applications Switching Application Power Management for DC/D... See More ⇒

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HY1506C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description 60V/48A D D D D D D D D RDS(ON)= 10.5m (typ.)@VGS = 10V RDS(ON)= 12.2m (typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available S S S G G S S S Pin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Power Tool Application ... See More ⇒

9.2. Size:225K hy
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SINGLE FIG.SINGLE PHASE HALF WAVE 60Hz DERATING CURVE FIG. 2 MAXIMUM NON- T1 FORWARD CURRENT AMBIENT TEMPERATURE ( ) 1 2 5 10 1 25 50 75 10 20 150 175 0.00 0.2 0.4 0.6 4 100 125 100 HY150N075T 75V / 150A 75V, RDS(ON)=4.5mW@VGS=10V, ID=30A N-Channel Enhancement Mode MOSFET Features TO-220AB Low On-State Resistance Excellent Gate Charge x RDS(ON) Product ... See More ⇒

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